Strong conductance variation in conformationally constrained oligosilane tunnel junctions.

نویسندگان

  • Christopher B George
  • Mark A Ratner
  • Joseph B Lambert
چکیده

The effects of molecular conformation on conductance in oligosilane-bridged metal-molecule-metal junctions are studied theoretically using density functional theory combined with a nonequilibrium Green's function approach. Varying the internal SiSiSiSi dihedral angles in hexasilane diamine chains changes the conductance by up to 3 orders of magnitude. This conformational dependence is due to the effects of sigma-delocalization on the positions of the highest occupied molecular orbital (HOMO) energies. The conductance values for the different conformations are related to electron transfer rates in donor-bridge-acceptor systems, and the effect of shifting the injection energy is examined. The transport properties are found to be extremely sensitive to the alignment between the HOMO energies and Fermi level of the gold electrodes.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

How Is the Coulomb Blockade Suppressed in High-Conductance Tunnel Junctions?

We present a theory of the Coulomb blockade for a tunnel junction, with arbitrarily large tunnel conductance but with small channel transmissions, placed in a general electromagnetic environment containing no island. Our model, based on a self-consistent calculation of the complex admittance of the junction, predicts that high tunnel conductances wash out the Coulomb blockade and restore Ohmic ...

متن کامل

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier i...

متن کامل

Spin effects in single electron tunneling

An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions – single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin tr...

متن کامل

Electronic Cooling in Nb/AlOx/Al/AlOx/Nb Double Tunnel Junctions

Several recent papers have predicted the feasibility of superconducting tunnel junction-based electronic cryocooler devices operating in the temperature range 0.1 4K. We have extended previous work in stacked Nb/AlOx devices to investigate the nonequilibrium effects in them and to examine the influence of barrier conductance and layer thickness on the electronic cooling achievable by this techn...

متن کامل

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Articles you may be interested in Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes Temperature dependence of tunnel resistance for Co Fe B ∕ Mg O ∕ Co Fe B magnetoresistive tunneling junctions: The ro...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • The journal of physical chemistry. A

دوره 113 16  شماره 

صفحات  -

تاریخ انتشار 2009